2mbi400n-060-01 igbt module 600v / 400a 2 in one-package features vce(sat) classified for easy parallel connection high speed switching voltage drive low inductance module structure applications inverter for motor drive ac and dc servo drive amplifier uninterruptible power supply industrial machines, such as welding machines maximum ratings and characteristics absolute maximum ratings (at tc=25c unless otherwise specified) item symbol collector-emitter voltage v ces gate-emitter voltage v ges collector continuous i c current 1ms i c pulse -i c 1ms -i c pulse max. power dissipation p c operating temperature t j storage temperature t stg isolation voltage v is screw torque mounting * 1 terminals * 2 rating 600 20 400 800 400 800 1500 +150 -40 to +125 ac 2500 (1min.) 3.5 4.5 unit v v a a a a w c c v nm nm item symbol characteristics conditions unit min. typ. max. zero gate voltage collector current gate-emitter leakage current gate-emitter threshold voltage collector-emitter saturation voltage input capacitance output capacitance reverse transfer capacitance turn-on time turn-off time diode forward on voltage reverse recovery time i ces i ges v ge(th) v ce(sat) c ies c oes c res t on t r t off t f v f t rr C C 2.0 C C 30 4.5 C 7.5 1.8 C 2.8 C 26400 C C 5870 C C 2670 C C 0.6 1.2 C 0.2 0.6 C 0.6 1.0 C 0.2 0.35 C C 3.0 C C 0.3 v ge =0v, v ce =600v v ce =0v, v ge =20v v ce =20v, i c =400ma v ge =15v, i c =400a v ge =0v v ce =10v f=1mhz v cc =300v i c =400a v ge =15v r g =4.7ohm i f =400a, v ge =0v i f =400a ma a v v pf s v s electrical characteristics (at tj=25c unless otherwise specified) thermal resistance characteristics item symbol characteristics conditions unit min. typ. max. rth(j-c) thermal resistance rth(j-c) rth(c-f)* C C 0.085 C C 0.15 C 0.025 C igbt diode the base to cooling fin c/w c/w c/w * : this is the value which is defined mounting on the additional cooling fin with thermal compound equivalent circuit schematic current control circuit g1 e1 g2 e2 c1 e2 c2e1 * 1 recommendable value : 2.5 to 3.5 nm (m5) or (m6) * 2 recommendable value : 3.5 to 4.5 nm v ce(sat) classification rank lenge conditions f 1.85 to 2.10v a 2.00 to 2.25v ic = 400a b 2.15 to 2.40v v ge = 15v c 2.30 to 2.60v tj = 25c d 2.50 to 2.80v ?p?^?@? discontinued product.
2mbi400n-060-01 igbt module characteristics (representative) collector current vs. collector-emitter voltage tj=25c collector current vs. collector-emitter voltage tj=125c collector-emitter vs. gate-emitter voltage tj=25c collector-emitter vs. gate-emitter voltage tj=125c switching time vs. collector current vcc=300v, rg=4.7 ohm, vge=15v, tj=25c switching time vs. collector current vcc=300v, rg=4.7 ohm, vge=15v, tj=125c collector-emitter voltage : vce [v] collector-emitter voltage : vce [v] collector current : ic [a] collector current : ic [a] 600 400 200 0 800 600 400 200 0 0 1 2 3 4 5 0 1 2 3 4 5 collector-emitter voltage : vce [v] collector-emitter voltage : vce [v] 10 8 6 4 2 0 0 5 10 15 20 25 0 5 10 15 20 25 10 8 6 4 2 0 gate-emitter voltage : vge [v] gate-emitter voltage : vge [v] switching time : ton, tr, toff, tf [n sec.] 1000 100 10 0 200 400 600 collector current : ic [a] 0 200 400 600 collector current : ic [a] switching time : ton, tr, toff, tf [n sec.] 1000 100 10 800 ?p?^?@? discontinued product.
2mbi400n-060-01 igbt module switching time vs. rg vcc=300v, ic=400a, vge=15v, tj=25c dynamic input characteristics tj=25c gate resistance : rg [ohm] 1 5 10 gate charge : qg [nc] 0 500 1000 1500 2000 2500 100 1000 10 500 400 300 200 100 0 switching time : ton, tr, toff, tf [n sec.] collector-emitter voltage : vce [v] forward current : if [a] 800 600 400 200 0 0 1 2 3 4 gate-emitter voltage : vge [v] 0 5 10 15 20 25 forward voltage : vf [v] reverse recovery current : irr [a] reverse recovery time : trr [n sec.] forward current vs. forward voltage vge=0v reverse recovery characteristics trr, irr, vs. if forward current : if [a] 100 thermal resistance : rth (j-c) [c/w] transient thermal resistance 0.01 0.1 0.001 0.01 0.1 1 pulse width : pw [sec.] reversed biased safe operating area +vge=15v, -vge = 15v, tj = 125c, rg = 4.7 ohm 0 200 400 600 < <> 3000 2500 2000 1500 1000 500 0 0 100 200 300 400 500 600 collector-emitter voltage : vce [v] collector current : ic [a] 1000 3500 4000 ?p?^?@? discontinued product.
outline drawings, mm 2mbi400n-060-01 igbt module switching loss vs. collector current vcc=300v, rg=4.7 ohm, vge=15v switching loss : eon, eoff, err [mj/cycle] collector current : ic [a] 0 10 20 40 0 200 400 600 collector-emitter voltage : vce [v] 0 5 10 15 20 25 30 35 1 10 100 capacitance : cies, coes, cres [nf] capacitance vs. collector-emitter voltage tj=25c 30 ?p?^?@? discontinued product.
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